English
 
Help Privacy Policy Disclaimer
  Advanced SearchBrowse

Item

ITEM ACTIONSEXPORT
 
 
DownloadE-Mail
 Local TagsRelease HistoryDetailsSummary
  Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning

Neuhold, G., Chassé, T., Paggel, J., & Horn, K. (1996). Observation of a Cs-induced state in the band gap of GaP(110): Alkali-metal bonding and Fermi-level pinning. Physical Review B, 54(12), 8623-8626. doi:10.1103/PhysRevB.54.8623.

Item is

 

show all hide all

Basic

show hide
Item Permalink: https://hdl.handle.net/21.11116/0000-0009-AA9F-5 Version Permalink: https://hdl.handle.net/21.11116/0000-0009-AD11-1
Genre: Journal Article

Files

show Files
hide Files
:
PhysRevB.54.8623.pdf (Publisher version), 83KB
View   Save
File Permalink:
https://hdl.handle.net/21.11116/0000-0009-AD10-2
Name:
PhysRevB.54.8623.pdf
Description:
-
OA-Status:
Visibility:
Public
MIME-Type / Checksum:
application/pdf / [MD5]
Technical Metadata:
View
Copyright Date:
1996
Copyright Info:
APS
License:
-

Locators

show

Creators

show
hide
 Creators:
Neuhold, Georg1, Author           
Chassé, T.2, Author
Paggel, Jens1, Author           
Horn, Karsten1, Author           
Affiliations:
1Fritz Haber Institute, Max Planck Society, ou_24021              
2Institut für Physikalische und Theoretische Chemie der Universität Leipzig, D-04103 Leipzig, Germany, ou_persistent22              

Content

show
hide
Free keywords: -
 Abstract: The deposition of submonolayer quantities of Cs onto GaP(110) causes strong photoemission features in the region of the semiconductor fundamental band gap. This observation is interpreted in terms of emission from a hybrid state caused by the interaction of the Cs 6s level with the unoccupied dangling-bond state. This hybrid state has long been postulated in descriptions of the metal-semiconductor surface bond, and is responsible for the pinning of the Fermi level. The absence of dispersion in the state suggests that Cs/GaP(110) represents a realization of a Mott-Hubbard insulator, by comparison with results from other alkali-metal/compound-semiconductor systems.

Details

show
hide
Language(s): eng - English
 Dates: 1996-05-241996-09-15
 Publication Status: Issued
 Pages: 4
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevB.54.8623
 Degree: -

Event

show

Legal Case

show

Project information

show

Source 1

show
hide
Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
 Creator(s):
Affiliations:
Publ. Info: Woodbury, NY : American Physical Society
Pages: 4 Volume / Issue: 54 (12) Sequence Number: - Start / End Page: 8623 - 8626 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008