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  Bi12Rh3Cu2I5: A 3D Weak Topological Insulator with Monolayer Spacers and Independent Transport Channels

Carrillo-Aravena, E., Finzel, K., Ray, R., Richter, M., Heider, T., Cojocariu, I., et al. (2022). Bi12Rh3Cu2I5: A 3D Weak Topological Insulator with Monolayer Spacers and Independent Transport Channels. Physica Status Solidi B, 2100447, pp. 1-12. doi:10.1002/pssb.202100447.

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 Creators:
Carrillo-Aravena, Eduardo1, Author
Finzel, Kati1, Author
Ray, Rajyavardhan1, Author
Richter, Manuel1, Author
Heider, Tristan1, Author
Cojocariu, Iulia1, Author
Baranowski, Daniel1, Author
Feyer, Vitaliy1, Author
Plucinski, Lukasz1, Author
Gruschwitz, Markus1, Author
Tegenkamp, Christoph1, Author
Ruck, Michael2, Author              
Affiliations:
1External Organizations, ou_persistent22              
2Michael Ruck, Max Planck Fellow, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863444              

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 Abstract: Topological insulators (TIs) are semiconductors with protected electronic surface states that allow dissipation-free transport. TIs are envisioned as ideal materials for spintronics and quantum computing. In Bi14Rh3I9, the first weak 3D TI, topology presumably arises from stacking of the intermetallic [(Bi4Rh)(3)I](2+) layers, which are predicted to be 2D TIs and to possess protected edge-states, separated by topologically trivial [Bi2I8](2-) octahedra chains. In the new layered salt Bi12Rh3Cu2I5, the same intermetallic layers are separated by planar, i.e., only one atom thick, [Cu2I4](2-) anions. Density functional theory (DFT)-based calculations show that the compound is a weak 3D TI, characterized by Z 2 = ( 0 ; 0001 ) , and that the topological gap is generated by strong spin-orbit coupling (E (g,calc.) similar to 10 meV). According to a bonding analysis, the copper cations prevent strong coupling between the TI layers. The calculated surface spectral function for a finite-slab geometry shows distinct characteristics for the two terminations of the main crystal faces ⟨001⟩, viz., [(Bi4Rh)(3)I](2+) and [Cu2I4](2-). Photoelectron spectroscopy data confirm the calculated band structure. In situ four-point probe measurements indicate a highly anisotropic bulk semiconductor (E (g,exp.) = 28 meV) with path-independent metallic conductivity restricted to the surface as well as temperature-independent conductivity below 60 K.

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Language(s): eng - English
 Dates: 2022-01-082022-01-08
 Publication Status: Published in print
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 Table of Contents: -
 Rev. Type: -
 Identifiers: ISI: 000745520900001
DOI: 10.1002/pssb.202100447
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Title: Physica Status Solidi B
  Abbreviation : Phys. Status Solidi B
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: - Volume / Issue: - Sequence Number: 2100447 Start / End Page: 1 - 12 Identifier: ISSN: 0370-1972
CoNE: https://pure.mpg.de/cone/journals/resource/958480240330