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  Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content

Vasileiadis, I. G., Lymperakis, L., Adikimenakis, A., Gkotinakos, A., Devulapalli, V., Liebscher, C., et al. (2021). Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content. Scientific Reports, 11(1): 20606. doi:10.1038/s41598-021-99989-0.

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Substitutional synthesis of sub-nanometer InGaN_GaN quantum wells with high indium content - s41598-021-99989-0.pdf (Publisher version), 5MB
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The Authors




Vasileiadis, Isaak G.1, Author
Lymperakis, Liverios2, Author              
Adikimenakis, Adam3, Author
Gkotinakos, A.1, Author
Devulapalli, Vivek4, Author              
Liebscher, Christian4, Author              
Androulidaki, Maria3, 5, Author
Hübner, René6, Author
Karakostas, Theodoros1, Author
Georgakilas, Alexandros I.3, 5, Author
Komninou, Philomela1, Author              
Dimakis, Emmanouil6, Author
Dimitrakopulos, G. P.1, Author
1Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece, ou_persistent22              
2Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863344              
3Microelectronics Research Group (MRG), IESL, FORTH, Heraklion, Greece, ou_persistent22              
4Advanced Transmission Electron Microscopy, Structure and Nano-/ Micromechanics of Materials, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society, ou_1863399              
5Department of Physics, University of Crete, Heraklion, Greece, ou_persistent22              
6Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany, ou_persistent22              


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 Abstract: InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as well as for exploiting topological insulator behavior in III-nitride semiconductors. However, it had been argued that the highest indium content in such ultra-thin QWs is kinetically limited to a maximum of 33%, narrowing down the potential range of applications. Here, it is demonstrated that quasi two-dimensional (quasi-2D) QWs with thickness of one atomic monolayer can be deposited with indium contents far exceeding this limit, under certain growth conditions. Multi-QW heterostructures were grown by plasma-assisted molecular beam epitaxy, and their composition and strain were determined with monolayer-scale spatial resolution using quantitative scanning transmission electron microscopy in combination with atomistic calculations. Key findings such as the self-limited QW thickness and the non-monotonic dependence of the QW composition on the growth temperature under metal-rich growth conditions suggest the existence of a substitutional synthesis mechanism, involving the exchange between indium and gallium atoms at surface sites. The highest indium content in this work approached 50%, in agreement with photoluminescence measurements, surpassing by far the previously regarded compositional limit. The proposed synthesis mechanism can guide growth efforts towards binary InN/GaN quasi-2D QWs.


Language(s): eng - English
 Dates: 2021-10-18
 Publication Status: Published in print
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1038/s41598-021-99989-0
 Degree: -



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Project name : Work supported by project IKYDA “ULTIMAT” funded by the Greek State Scholarships Foundation (IKY) and DAAD, and project “INNOVATION-EL” (MIS 5002772), funded by the Operational Programme "Competi- tiveness, Entrepreneurship and Innovation" (NSRF 2014-2020), co-financed by Greece and the EU (European Regional Development Fund). I.G.V. acknowledges support by the State Scholarships Foundation (IKY) project “Strengthening Human Resources Research Potential via Doctorate Research” (MIS-5000432). FORTH research- ers acknowledge support from the Hellenic Foundation for Research and Innovation (HFRI), project EPINEET (HFRI-FM17-3173). We would like to thank the Aristotle University of Thessaloniki HPC infrastructure for the provision of computing resources.
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Source 1

Title: Scientific Reports
  Abbreviation : Sci. Rep.
Source Genre: Journal
Publ. Info: London, UK : Nature Publishing Group
Pages: 13 Volume / Issue: 11 (1) Sequence Number: 20606 Start / End Page: - Identifier: ISSN: 2045-2322
CoNE: https://pure.mpg.de/cone/journals/resource/2045-2322