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  Contribution of free carriers to light absorption upon intense light- semiconductor interaction

Hollinger, R., Haddad, E., Zapf, M., Shumakova, V., Herrmann, P., Röder, R., et al. (2021). Contribution of free carriers to light absorption upon intense light- semiconductor interaction. In 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE. doi:10.1109/CLEO/Europe-EQEC52157.2021.9541549.

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 Urheber:
Hollinger, Richard1, 2, Autor
Haddad, Elissa3, Autor
Zapf, Maximilian4, Autor
Shumakova, Valentina5, Autor
Herrmann, Paul1, Autor
Röder, Robert4, Autor
Uschmann, Ingo1, 2, Autor
Reislöhner, Udo4, Autor
Pugžlys, Audrius5, Autor
Baltuška, Andrius5, Autor
Légaré, Francois3, Autor
Zürch, Michael1, 6, 7, 8, Autor           
Ronning, Carsten4, 9, Autor
Spielmann, Christian1, 2, 9, Autor
Kartashov, Daniil1, 9, Autor
Affiliations:
1Institute of Optics and Quantum Electronics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, 07743 Jena, Germany, ou_persistent22              
2Helmholtz Institute Jena, Fröbelstieg 3, 07743 Jena, Germany, ou_persistent22              
3Centre Énergie Matériaux et Télécommunications, Institut National de la Recherche Scientifique, 1650 Boulevard Lionel-Boulet, Varennes, Québec J3X1S2, Canada, ou_persistent22              
4Institute for Solid State Physics, Friedrich-Schiller-University Jena, Max-Wien-Platz 1, 07743 Jena, Germany, ou_persistent22              
5Institute for Photonics, Technical University Vienna, Gußhausstrasse. 25-29, 1040 Vienna, Austria, ou_persistent22              
6Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              
7Department of Chemistry, University of California Berkeley, 237B Hildebrand Hall, Berkeley, CA 94720, USA, ou_persistent22              
8Lawrence Berkeley National Laboratory, Materials Sciences Division, Berkeley, CA 94720, USA, ou_persistent22              
9Abbe Center of Photonics, Friedrich Schiller University, Jena, Albert Einstein Straße 6, 07745 Jena, Germany, ou_persistent22              

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 Zusammenfassung: In this work we investigated the role of free carriers in the interaction of a wide-band gap semiconductor with strong light fields at long wavelengths. Motivated by the beneficial scaling law of the pondermotive potential (Up ~ Iλ2), the interaction of intense long wavelength laser pulses with condensed matter has attracted huge attention over the last decade [Kruchinin] . After excitation of quasi free electrons in the conduction band (CB) via multiphoton absorption or tunnelling the strong pondermotive force leads to highly energetic free electrons. Bound electrons can be collisionally excited if the energy of the free electrons exceed the band gap energy. Here, we use the onset of near ultraviolet (NUV) stimulated emission in ZnO thin films ( Fig. 1a ) to study off-resonance light absorption and the role of free carriers thereby.

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Sprache(n): eng - English
 Datum: 2021-09-302021
 Publikationsstatus: Erschienen
 Seiten: 1
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Expertenbegutachtung
 Art des Abschluß: -

Veranstaltung

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Titel: 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
Veranstaltungsort: Munich, Germany
Start-/Enddatum: 2021-06-21 - 2021-06-25

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Titel: 2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
Genre der Quelle: Konferenzband
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: IEEE
Seiten: 1 Band / Heft: - Artikelnummer: - Start- / Endseite: - Identifikator: ISBN: 978-1-6654-1876-8