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Abstract:
The heterojunction between silicon(111) and zinc sulfide was studied using Auger electron spectroscopy, photoelectron spectroscopy, and low‐energy electron diffraction. Zinc sulfide layers were deposited onto cleaved Si(111) surfaces as well as Si(111)‐(7×7) wafers by molecular beam epitaxy. The overlayers exhibited fair crystalline quality, and the characteristic valence‐band spectrum of ZnS. The valence‐band offset between the two semiconductors was determined from the core and valence‐band spectra (ΔEv=−0.7 eV) and found to be much smaller than predicted. We attribute this disagreement, and the larger than usual scatter in our data, to the influence of interface dipoles in this polar interface, the density of which may partly be influenced by a varying amount of interface reaction.
