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  Adatom-induced donor states during the early stages of Schottky-barrier formation: Ga, In, and Pb on Si(113)

Althainz, P., Myler, U., & Jacobi, K. (1991). Adatom-induced donor states during the early stages of Schottky-barrier formation: Ga, In, and Pb on Si(113). Physical Review B, 43(17), 14157-14163. doi:/10.1103/PhysRevB.43.14157.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000A-0F04-2 Version Permalink: https://hdl.handle.net/21.11116/0000-000A-78E4-E
Genre: Journal Article

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PhysRevB.43.14157.pdf (Publisher version), 311KB
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https://hdl.handle.net/21.11116/0000-000A-78E3-F
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1991
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APS
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 Creators:
Althainz, P.1, Author           
Myler, U.1, Author           
Jacobi, Karl2, Author           
Affiliations:
1Fritz Haber Institute, Max Planck Society, ou_24021              
2Physical Chemistry, Fritz Haber Institute, Max Planck Society, ou_634546              

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 Abstract: We performed angle-resolved ultraviolet and soft-x-ray photoelectron spectroscopy for the early stages of Schottky-barrier formation of Ga, In, and Pb on Si(113) at room temperature. In the coverage region below 0.1 monolayer a band-bending behavior, typical for donor states, is found. The energies of the adatom-induced donor states in the band gap depend on the adatoms. The Schottky barrier reaches its final value at a coverage of about one monolayer. The values are 0.35 eV above the valence-band maximum for In and Ga and 0.425 eV for Pb. Measurements with Xe interlayers were made to verify that these interfaces are not reactive.

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Language(s): eng - English
 Dates: 1990-12-181991-06-15
 Publication Status: Issued
 Pages: 7
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: /10.1103/PhysRevB.43.14157
 Degree: -

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Title: Physical Review B
  Abbreviation : Phys. Rev. B
Source Genre: Journal
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Publ. Info: Woodbury, NY : American Physical Society
Pages: 7 Volume / Issue: 43 (17) Sequence Number: - Start / End Page: 14157 - 14163 Identifier: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008