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  Exotic magnetic and electronic properties of layered CrI3 single crystals under high pressure

Ghosh, A., Singh, D., Aramaki, T., Mu, Q., Borisov, V., Kvashnin, Y., et al. (2022). Exotic magnetic and electronic properties of layered CrI3 single crystals under high pressure. Physical Review B, 105(8): L081104, pp. 1-6. doi:10.1103/PhysRevB.105.L081104.

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Ghosh, Anirudha1, Autor
Singh, D.1, Autor
Aramaki, T.1, Autor
Mu, Qingge2, Autor           
Borisov , V1, Autor
Kvashnin, Y.1, Autor
Haider, G.1, Autor
Jonak, M.1, Autor
Chareev, D.1, Autor
Medvedev, S. A.3, Autor           
Klingeler, R.1, Autor
Mito, M.1, Autor
Abdul-Hafidh, E. H.1, Autor
Vejpravova, J.1, Autor
Kalbac, M.1, Autor
Ahuja, R.1, Autor
Eriksson, Olle1, Autor
Abdel-Hafiez, Mahmoud1, Autor
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Sergiy Medvediev, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863438              

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 Zusammenfassung: Through advanced experimental techniques on CrI3 single crystals, we derive a pressure-temperature phase diagram. We find that T-c increases to similar to 66 K with pressure up to similar to 3 GPa followed by a decrease to similar to 10 K at 21.2 GPa. The experimental results are reproduced by theoretical calculations based on density functional theory where electron-electron interactions are treated by a static on-site Hubbard U on Cr 3d orbitals. The origin of the pressure-induced reduction of the ordering temperature is associated with a decrease in the calculated bond angle, from 95 degrees at ambient pressure to similar to 85 degrees at 25 GPa. Above 22 GPa, experiment and theory jointly point to the idea that the ferromagnetically ordered state is destroyed, giving rise first to a complex, unknown magnetic configuration, and at sufficiently high pressures a pure antiferromagnetic configuration. This sequence of transitions in the magnetism is accompanied by a well-detected pressure-induced semiconductor-to-metal phase transition that is revealed by both high-pressure resistivity measurements and ab initio theory.

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Sprache(n): eng - English
 Datum: 2022-02-082022-02-08
 Publikationsstatus: Erschienen
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 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: ISI: 000754185400001
DOI: 10.1103/PhysRevB.105.L081104
 Art des Abschluß: -

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Titel: Physical Review B
  Kurztitel : Phys. Rev. B
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Woodbury, NY : American Physical Society
Seiten: - Band / Heft: 105 (8) Artikelnummer: L081104 Start- / Endseite: 1 - 6 Identifikator: ISSN: 1098-0121
CoNE: https://pure.mpg.de/cone/journals/resource/954925225008