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  Transition-metal impurities in II–VI semiconductors: characterization and switching of charge states

Kreissl, J., & Schulz, H.-J. (1996). Transition-metal impurities in II–VI semiconductors: characterization and switching of charge states. Journal of Crystal Growth, 161(1-4), 239-249. doi:10.1016/0022-0248(95)00665-6.

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 Creators:
Kreissl, J.1, Author
Schulz, Hans-Joachim2, Author           
Affiliations:
1Arbeitsgruppe EPR am Institut für Festkörperphysik, Technische Universität Berlin, Rudower Chaussee 5, D-12484 Berlin, Germany, ou_persistent22              
2Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023              

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 Abstract: Recent progress is reviewed regarding 3d transition-metal impurities (Sc … Fe) in those II–VI compounds CdTe, ZnTe, and ZnSe which are nowadays most often studied. Based on extensive studies of their electronic properties by means of optical and EPR methods, as well as combinations between them, conclusions can be drawn on their incorporation into the lattice, their energy level structure, and relationships between these characteristics.

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Language(s): eng - English
 Dates: 1996-04-01
 Publication Status: Issued
 Pages: 11
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1016/0022-0248(95)00665-6
 Degree: -

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Title: Journal of Crystal Growth
  Abbreviation : J. Cryst. Growth
Source Genre: Journal
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Publ. Info: Amsterdam : North-Holland
Pages: 11 Volume / Issue: 161 (1-4) Sequence Number: - Start / End Page: 239 - 249 Identifier: ISSN: 0022-0248
CoNE: https://pure.mpg.de/cone/journals/resource/954925412860