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  Quasi-quantized Hall response in bulk InAs

Wawrzyńczak, R., Galeski, S., Noky, J., Sun, Y., Felser, C., & Gooth, J. (2022). Quasi-quantized Hall response in bulk InAs. Scientific Reports, 12: 2153, pp. 1-6. doi:10.1038/s41598-022-05916-2.

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Wawrzyńczak, R.1, Author              
Galeski, S.1, Author              
Noky, J.1, Author              
Sun, Y.1, Author              
Felser, C.2, Author              
Gooth, J.3, Author              
Affiliations:
1Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
2Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              
3Nanostructured Quantum Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_3018212              

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 Abstract: The quasi-quantized Hall effect (QQHE) is the three-dimensional (3D) counterpart of the integer quantum Hall effect (QHE), exhibited only by two-dimensional (2D) electron systems. It has recently been observed in layered materials, consisting of stacks of weakly coupled 2D platelets that are yet characterized by a 3D anisotropic Fermi surface. However, it is predicted that the quasi-quantized 3D version of the 2D QHE should occur in a much broader class of bulk materials, regardless of the underlying crystal structure. Here, we compare the observation of quasi-quantized plateau-like features in the Hall conductivity of the n-type bulk semiconductor InAs with the predictions for the 3D QQHE in presence of parabolic electron bands. InAs takes form of a cubic crystal without any low-dimensional substructure. The onset of the plateau-like feature in the Hall conductivity scales with 2/3kFz/π in units of the conductance quantum and is accompanied by a Shubnikov–de Haas minimum in the longitudinal resistivity, consistent wit the results of calculations. This confirms the suggestion that the 3D QQHE may be a generic effect directly observable in materials with small Fermi surfaces, placed in sufficiently strong magnetic fields. © 2022, The Author(s).

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Language(s): eng - English
 Dates: 2022-02-092022-02-09
 Publication Status: Published in print
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 Identifiers: DOI: 10.1038/s41598-022-05916-2
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Title: Scientific Reports
  Abbreviation : Sci. Rep.
Source Genre: Journal
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Publ. Info: London, UK : Nature Publishing Group
Pages: - Volume / Issue: 12 Sequence Number: 2153 Start / End Page: 1 - 6 Identifier: ISSN: 2045-2322
CoNE: https://pure.mpg.de/cone/journals/resource/2045-2322