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Abstract:
High-resistivity CdTe:V crystals are investigated by photo-luminescence in the infrared spectral region. In addition to the known 3T2(F)→
3A2(F) emission of V3+ near 4100 cm−1, two further luminescence bands are detected at lower energies. A band peaking at 3450 cm−1 is assigned to the 4T2(F) →
4T1(F) transition of V2+ and a strong luminescence near 2780 cm−1 is identified as the 5E(D) →
5T2(D) emission of V+. These results are compared to other vanadium-doped II–VI compounds. A clear general trend of the transition energy with the band gap energy is deduced.