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  Photonic-Crafting of Non-Volatile and Rewritable Antiferromagnetic Spin Textures with Drastic Difference in Electrical Conductivity

Kuo, C.-Y., Liou, Y.-D., Hu, Z., Liao, S.-C., Tsai, H.-M., Fu, H.-W., et al. (2022). Photonic-Crafting of Non-Volatile and Rewritable Antiferromagnetic Spin Textures with Drastic Difference in Electrical Conductivity. Advanced Materials, n/a(n/a): 2200610, pp. 1-8. doi:10.1002/adma.202200610.

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 Creators:
Kuo, Chang-Yang1, Author
Liou, Yi-De1, Author
Hu, Zhiwei2, Author              
Liao, Sheng-Chieh3, Author              
Tsai, Huang-Ming1, Author
Fu, Huang-Wen1, Author
Hua, Chih-Yu1, Author
Chen, Yi-Chun1, Author
Lin, Hong-Ji1, Author
Tanaka, Arata1, Author
Chen, Chien-Te1, Author
Yang, Jan-Chi1, Author
Chang, Chun-Fu4, Author              
Affiliations:
1External Organizations, ou_persistent22              
2Zhiwei Hu, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863461              
3Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863445              
4Chun-Fu Chang, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863447              

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Free keywords: antiferromagnetic spintronics, electrically readable antiferromagnetic textures, non-volatile and rewritable antiferromagnetic spin states, strained Bismuth ferrite thin film
 Abstract: Abstract Antiferromagnetic spintronics is an emerging field of non-volatile data storage and information processing. The zero net magnetization and zero stray fields of antiferromagnetic materials eliminate interference between neighbor units, leading to high-density memory integrations. However, this invisible magnetic character at the same time also poses a great challenge in controlling and detecting magnetic states in antiferromagnets. Here, two antiferromagnetic spin states close in energy in strained BiFeO3 thin films at room temperature are discovered. It can be reversibly switched between these two non-volatile antiferromagnetic states by a moderate magnetic field and a non-contact optical approach. Importantly, the conductivity of the areas with each antiferromagnetic textures is drastically different. It is conclusively demonstrated the capability of optical writing and electrical reading of these newly discovered bistable antiferromagnetic states in the BiFeO3 thin films.

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Language(s): eng - English
 Dates: 2022-03-212022-03-21
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1002/adma.202200610
 Degree: -

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Title: Advanced Materials
  Other : Adv. Mater.
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: 2200610 Volume / Issue: n/a (n/a) Sequence Number: 2200610 Start / End Page: 1 - 8 Identifier: ISSN: 0935-9648
CoNE: https://pure.mpg.de/cone/journals/resource/954925570855