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  Photonic-Crafting of Non-Volatile and Rewritable Antiferromagnetic Spin Textures with Drastic Difference in Electrical Conductivity

Kuo, C.-Y., Liou, Y.-D., Hu, Z., Liao, S.-C., Tsai, H.-M., Fu, H.-W., et al. (2022). Photonic-Crafting of Non-Volatile and Rewritable Antiferromagnetic Spin Textures with Drastic Difference in Electrical Conductivity. Advanced Materials, n/a(n/a): 2200610, pp. 1-8. doi:10.1002/adma.202200610.

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Kuo, Chang-Yang1, Autor
Liou, Yi-De1, Autor
Hu, Zhiwei2, Autor           
Liao, Sheng-Chieh3, Autor           
Tsai, Huang-Ming1, Autor
Fu, Huang-Wen1, Autor
Hua, Chih-Yu1, Autor
Chen, Yi-Chun1, Autor
Lin, Hong-Ji1, Autor
Tanaka, Arata1, Autor
Chen, Chien-Te1, Autor
Yang, Jan-Chi1, Autor
Chang, Chun-Fu4, Autor           
Affiliations:
1External Organizations, ou_persistent22              
2Zhiwei Hu, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863461              
3Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863445              
4Chun-Fu Chang, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863447              

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Schlagwörter: antiferromagnetic spintronics, electrically readable antiferromagnetic textures, non-volatile and rewritable antiferromagnetic spin states, strained Bismuth ferrite thin film
 Zusammenfassung: Abstract Antiferromagnetic spintronics is an emerging field of non-volatile data storage and information processing. The zero net magnetization and zero stray fields of antiferromagnetic materials eliminate interference between neighbor units, leading to high-density memory integrations. However, this invisible magnetic character at the same time also poses a great challenge in controlling and detecting magnetic states in antiferromagnets. Here, two antiferromagnetic spin states close in energy in strained BiFeO3 thin films at room temperature are discovered. It can be reversibly switched between these two non-volatile antiferromagnetic states by a moderate magnetic field and a non-contact optical approach. Importantly, the conductivity of the areas with each antiferromagnetic textures is drastically different. It is conclusively demonstrated the capability of optical writing and electrical reading of these newly discovered bistable antiferromagnetic states in the BiFeO3 thin films.

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Sprache(n): eng - English
 Datum: 2022-03-212022-03-21
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: -
 Identifikatoren: DOI: 10.1002/adma.202200610
 Art des Abschluß: -

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Titel: Advanced Materials
  Andere : Adv. Mater.
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Weinheim : Wiley-VCH
Seiten: 2200610 Band / Heft: n/a (n/a) Artikelnummer: 2200610 Start- / Endseite: 1 - 8 Identifikator: ISSN: 0935-9648
CoNE: https://pure.mpg.de/cone/journals/resource/954925570855