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  Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs

Schmult, S., Wirth, S., Silva, C., Appelt, P., Großer, A., & Mikolajick, T. (2022). Systematic suppression of parasitic conductivity highlights undistorted quantum transport in GaN/AlGaN 2DEGs. Journal of Crystal Growth, 589: 126673, pp. 1-4. doi:10.1016/j.jcrysgro.2022.126673.

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 Creators:
Schmult, S.1, Author
Wirth, S.2, Author           
Silva, C.1, Author
Appelt, P.1, Author
Großer, A.1, Author
Mikolajick, T.1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Steffen Wirth, Physics of Correlated Matter, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863460              

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Free keywords: Carbon; Gallium nitride; III-V semiconductors; Molecular beam epitaxy; Quantum chemistry; Semiconductor doping; Substrates; Temperature; Wide band gap semiconductors, A1.; A3.; B1.; B3.; Carbon δ-doping; Heterojunction semiconductor devices; Molecular-beam epitaxy; Parasitic conductivity; Parasitics; Ultra-pure GaN/AlGaN heterostructure, Heterojunctions
 Abstract: The suppression of parasitic conductivity at the substrate/MBE regrowth interface in GaN/AlGaN heterostructures by carbon δ-doping is reported. Parasitic conductivity results from silicon adhesion at the GaN substrate surface; its removal before loading the substrates into the UHV growth chamber seems to be impossible. This contamination and the resulting parasitic conductivity is particularly detrimental when growing on unintentionally doped substrates since it masks the 2D transport properties in lateral transport devices even at cryogenic temperatures. The formation of this parasitic channel can be impeded by compensating the silicon-induced charges through carbon δ-doping. In consequence, the intrinsic 2D channel properties can be studied in low-temperature magneto-transport measurements. © 2022 Elsevier B.V.

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Language(s): eng - English
 Dates: 2022-04-152022-04-15
 Publication Status: Published in print
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1016/j.jcrysgro.2022.126673
BibTex Citekey: Schmult2022
 Degree: -

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Title: Journal of Crystal Growth
  Abbreviation : J. Cryst. Growth
Source Genre: Journal
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Publ. Info: Amsterdam : North-Holland
Pages: - Volume / Issue: 589 Sequence Number: 126673 Start / End Page: 1 - 4 Identifier: ISSN: 0022-0248
CoNE: https://pure.mpg.de/cone/journals/resource/954925412860