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  Chemical Potential Switching of the Anomalous Hall Effect in an Ultrathin Noncollinear Antiferromagnetic Metal

Qin, P., Yan, H., Fan, B., Feng, Z., Zhou, X., Wang, X., et al. (2022). Chemical Potential Switching of the Anomalous Hall Effect in an Ultrathin Noncollinear Antiferromagnetic Metal. Advanced Materials, 34(24): 2200487. doi:10.1002/adma.202200487.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000A-7DA4-1 Version Permalink: https://hdl.handle.net/21.11116/0000-000B-F5C8-F
Genre: Journal Article

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Advanced Materials - 2022 - Qin - Chemical Potential Switching of the Anomalous Hall Effect in an Ultrathin Noncollinear.pdf (Publisher version), 3MB
 
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Advanced Materials - 2022 - Qin - Chemical Potential Switching of the Anomalous Hall Effect in an Ultrathin Noncollinear.pdf
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https://doi.org/10.1002/adma.202200487 (Publisher version)
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 Creators:
Qin, Peixin1, Author
Yan, Han1, Author
Fan, Benshu2, 3, Author
Feng, Zexin1, Author
Zhou, Xiaorong1, Author
Wang, Xiaoning1, Author
Chen, Hongyu1, Author
Meng, Ziang1, Author
Duan, Wenhui2, 3, Author
Tang, P.1, 4, 5, Author           
Liu, Zhiqi1, Author
Affiliations:
1School of Materials Science and Engineering, Beihang University, ou_persistent22              
2State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, ou_persistent22              
3Frontier Science Center for Quantum Information, Beijing, ou_persistent22              
4Theory Group, Theory Department, Max Planck Institute for the Structure and Dynamics of Matter, Max Planck Society, ou_2266715              
5Center for Free-Electron Laser Science, ou_persistent22              

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 Abstract: The discovery of the anomalous Hall effect in noncollinear antiferromagnetic metals represents one of the most important breakthroughs for the emergent antiferromagnetic spintronics. The tuning of chemical potential has been an important theoretical approach to varying the anomalous Hall conductivity, but the direct experimental demonstration has been challenging owing to the large carrier density of metals. In this work, an ultrathin noncollinear antiferromagnetic Mn3Ge film is fabricated and its carrier density is modulated by ionic liquid gating. Via a small voltage of ≈3 V, its carrier density is altered by ≈90% and, accordingly, the anomalous Hall effect is completely switched off. This work thus creates an attractive new way to steering the anomalous Hall effect in noncollinear antiferromagnets.

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 Dates: 2022-03-162022-01-162022-04-082022-06-16
 Publication Status: Issued
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 Rev. Type: Peer
 Identifiers: DOI: 10.1002/adma.202200487
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Project name : Z.L. acknowledges financial support from the National Natural Science Foundation of China (No. 52121001). P.T. was supported by the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics.
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Title: Advanced Materials
  Other : Adv. Mater.
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: - Volume / Issue: 34 (24) Sequence Number: 2200487 Start / End Page: - Identifier: ISSN: 0935-9648
CoNE: https://pure.mpg.de/cone/journals/resource/954925570855