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  Red carbon thin film : a carbon–oxygen semiconductor with tunable properties by amine vapors and its carbonization toward carbon thin films

Giusto, P., Cruz, D., Rodriguez, Y., Rothe, R., & Tarakina, N. V. (2022). Red carbon thin film: a carbon–oxygen semiconductor with tunable properties by amine vapors and its carbonization toward carbon thin films. Advanced Materials Interfaces, 9(21): 2200834. doi:10.1002/admi.202200834.

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 Urheber:
Giusto, Paolo1, Autor                 
Cruz, Daniel, Autor
Rodriguez , Yael2, Autor
Rothe, Regina3, Autor           
Tarakina, Nadezda V.4, Autor           
Affiliations:
1External Organizations, ou_persistent22              
2Paolo Giusto, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_3245192              
3Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_1863288              
4Nadezda V. Tarakina, Kolloidchemie, Max Planck Institute of Colloids and Interfaces, Max Planck Society, ou_2522693              

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Schlagwörter: doping; optical properties; red carbon; thin films; vapor sensing
 Zusammenfassung: The requirements for organic semiconductor materials and new methods for their synthesis at low temperature have risen over the last decades, especially due to concerns of sustainability. Herein, the synthesis of a carbon/oxygen molecular semiconductor thin film, which is promptly reactive toward amines, is presented. This allows for tuning the semiconductor properties and application as amine vapor sensors for a scope of analogous amines. The gas-to-solid phase reaction causes a significant change of the films’ optical properties, blue-shifting the absorption and the photoluminescence spectra from the red to the near UV spectral range. The irreversible chemical reaction between the thin film and the amine vapor is also exploited for the preparation of nitrogen-containing thin carbon films. The herein presented materials and methods will be of interest for gas sensing applications as well as for the development of tunable semiconductors and heteroatom-doped thin films.

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Sprache(n): eng - English
 Datum: 2022-06-272022
 Publikationsstatus: Erschienen
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 Ort, Verlag, Ausgabe: -
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 Identifikatoren: DOI: 10.1002/admi.202200834
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Titel: Advanced Materials Interfaces
  Kurztitel : Adv. Mater. Interfaces
Genre der Quelle: Zeitschrift
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Ort, Verlag, Ausgabe: Weinheim : Wiley-VCH
Seiten: - Band / Heft: 9 (21) Artikelnummer: 2200834 Start- / Endseite: - Identifikator: ISSN: 2196-7350