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  Red Carbon Thin Film: A Carbon-Oxygen Semiconductor with Tunable Properties by Amine Vapors and Its Carbonization toward Carbon Thin Films

Giusto, P., Cruz, D., Rodriguez, Y., Rothe, R., & Tarakina, N. V. (2022). Red Carbon Thin Film: A Carbon-Oxygen Semiconductor with Tunable Properties by Amine Vapors and Its Carbonization toward Carbon Thin Films. Advanced Materials Interfaces, 9(21): 2200834. doi:10.1002/admi.202200834.

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Adv Materials Inter - 2022 - Giusto - Red Carbon Thin Film A Carbon Oxygen Semiconductor with Tunable Properties by Amine.pdf (Publisher version), 8MB
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Adv Materials Inter - 2022 - Giusto - Red Carbon Thin Film A Carbon Oxygen Semiconductor with Tunable Properties by Amine.pdf
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2022
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 Creators:
Giusto, Paolo1, Author
Cruz, Daniel2, Author           
Rodriguez, Yael1, Author
Rothe, Regina1, Author
Tarakina, Nadezda V.1, Author
Affiliations:
1Max Planck Institute of Colloids and Interfaces, Department of Colloid Chemistry, Am Mühlenberg 1, 14476 Potsdam-Golm, Germany, ou_persistent22              
2Inorganic Chemistry, Fritz Haber Institute, Max Planck Society, ou_24023              

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 Abstract: The requirements for organic semiconductor materials and new methods for their synthesis at low temperature have risen over the last decades, especially due to concerns of sustainability. Herein, the synthesis of a carbon/oxygen molecular semiconductor thin film, which is promptly reactive toward amines, is presented. This allows for tuning the semiconductor properties and application as amine vapor sensors for a scope of analogous amines. The gas-to-solid phase reaction causes a significant change of the films’ optical properties, blue-shifting the absorption and the photoluminescence spectra from the red to the near UV spectral range. The irreversible chemical reaction between the thin film and the amine vapor is also exploited for the preparation of nitrogen-containing thin carbon films. The herein presented materials and methods will be of interest for gas sensing applications as well as for the development of tunable semiconductors and heteroatom-doped thin films.

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Language(s): eng - English
 Dates: 2022-05-162022-04-152022-06-27
 Publication Status: Published online
 Pages: 9
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1002/admi.202200834
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Title: Advanced Materials Interfaces
  Abbreviation : Adv. Mater. Interfaces
Source Genre: Journal
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Publ. Info: Weinheim : Wiley-VCH
Pages: 9 Volume / Issue: 9 (21) Sequence Number: 2200834 Start / End Page: - Identifier: ISSN: 2196-7350
CoNE: https://pure.mpg.de/cone/journals/resource/2196-7350