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  Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons

Mutlu, Z., Lin, Y., Barin, G. B., Zhang, Z., Pitner, G., Wang, S., et al. (2021). Short-Channel Double-Gate FETs with Atomically Precise Graphene Nanoribbons. In 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM). New York, NY: Institute of Electrical and Electronics Engineers. Electron Devices Group. doi:10.1109/IEDM19574.2021.9720620.

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Genre: Conference Paper

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 Creators:
Mutlu, Z., Author
Lin, Y., Author
Barin, G. B., Author
Zhang, Z., Author
Pitner, G., Author
Wang, S., Author
Darawish, R., Author
Giovannantonio, M. Di, Author
Wang, H., Author
Cai, J., Author
Passlack, M., Author
Diaz, C. H., Author
Narita, Akimitsu1, Author           
Müllen, Klaus1, Author           
Fischer, F. R., Author
Bandaru, P., Author
Kummel, A. C., Author
Ruffieux, P., Author
Fasel, R., Author
Bokor, J., Author
Affiliations:
1Dept. Müllen: Synthetic Chemistry, MPI for Polymer Research, Max Planck Society, ou_1800289              

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Language(s): eng - English
 Dates: 2021
 Publication Status: Published online
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: DOI: 10.1109/IEDM19574.2021.9720620
 Degree: -

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Title: IEEE International Electron Devices Meeting (IEDM)
Place of Event: San Francisco, CA
Start-/End Date: 2021-12-11 - 2021-12-16

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Title: 2021 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)
Source Genre: Proceedings
 Creator(s):
Affiliations:
Publ. Info: New York, NY : Institute of Electrical and Electronics Engineers. Electron Devices Group
Pages: - Volume / Issue: - Sequence Number: - Start / End Page: - Identifier: ISBN: 978-1-6654-2572-8

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Title: IEEE International Electron Devices Meeting
Source Genre: Series
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Affiliations:
Publ. Info: New York, NY : Institute of Electrical and Electronics Engineers. Electron Devices Group
Pages: - Volume / Issue: 2021 Sequence Number: - Start / End Page: - Identifier: ISSN: 2156-017X