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  Electronic surface structure of CoSi2(111)/Si(111): implications for ballistic electron-emission microscopy currents

Reuter, K., de Andres, P. L., Garcı́a-Vidal, F. J., Flores, F., & Heinz, K. (2000). Electronic surface structure of CoSi2(111)/Si(111): implications for ballistic electron-emission microscopy currents. Applied Surface Science, 166(1-4), 103-107. doi:10.1016/S0169-4332(00)00387-1.

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 Creators:
Reuter, Karsten1, Author           
de Andres, P. L., Author
Garcı́a-Vidal, F. J., Author
Flores, F., Author
Heinz, K., Author
Affiliations:
1Universidad Autónoma de Madrid, Spain, ou_persistent22              

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 Abstract: Using a decimation technique, and imposing electrostatic self-consistency, we compute the surface electronic structure of various CoSi2(111)/Si(111) phases. The projected band structures and LDOS indicate a richness of surface related features. For the (1×1)Co-rich termination excellent agreement with experimental data and a recent DFT investigation is obtained. Strongly localized surface states on the high chain atoms of the (2×1) Pandey-chain like reconstruction are identified as causing the experimentally observed surface topography induced contrast in Ballistic Electron Emission Microscopy (BEEM) images of such films.

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Language(s): eng - English
 Dates: 2000-09-072000-10-09
 Publication Status: Issued
 Pages: 5
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1016/S0169-4332(00)00387-1
 Degree: -

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Title: Applied Surface Science
  Abbreviation : Appl. Surf. Sci.
Source Genre: Journal
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Publ. Info: Amsterdam : Elsevier B.V.
Pages: 5 Volume / Issue: 166 (1-4) Sequence Number: - Start / End Page: 103 - 107 Identifier: ISSN: 0169-4332
CoNE: https://pure.mpg.de/cone/journals/resource/954928576736