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  Ballistic Electron Emission Microscopy on CoSi2/Si(111) Interfaces: Band Structure Induced Atomic-Scale Resolution and Role of Localized Surface States

Reuter, K., Garcia-Vidal, F. J., de Andres, P. L., Flores, F., & Heinz, K. (1998). Ballistic Electron Emission Microscopy on CoSi2/Si(111) Interfaces: Band Structure Induced Atomic-Scale Resolution and Role of Localized Surface States. Physical Review Letters, 81(22), 4963-4966. doi:10.1103/PhysRevLett.81.4963.

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PhysRevLett.81.4963.pdf (Publisher version), 344KB
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PhysRevLett.81.4963.pdf
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1998
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APS
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 Creators:
Reuter, Karsten1, 2, Author           
Garcia-Vidal, F. J., Author
de Andres, P. L., Author
Flores, F., Author
Heinz, K., Author
Affiliations:
1Lehrstuhl für Festkörperphysik, Universität Erlangen-Nürnberg, ou_persistent22              
2Universidad Autónoma de Madrid, Spain, ou_persistent22              

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 Abstract: Applying a Keldysh Green's function method it is shown that hot electrons injected from a scanning tunneling microscope tip into a CoSi2/Si(111) system form a highly focused beam due to the silicide band structure. This explains the atomic resolution obtained in recent ballistic electron emission microscopy (BEEM) experiments. Localized surface states in the (2×1) reconstruction are found to be responsible for the also reported anticorrugation of the BEEM current. These results clearly demonstrate the importance of bulk and surface band structure effects for a detailed understanding of BEEM data.

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Language(s): eng - English
 Dates: 1998-07-211998-11-30
 Publication Status: Issued
 Pages: 4
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: DOI: 10.1103/PhysRevLett.81.4963
 Degree: -

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Title: Physical Review Letters
  Abbreviation : Phys. Rev. Lett.
Source Genre: Journal
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Publ. Info: Woodbury, N.Y. : American Physical Society
Pages: 4 Volume / Issue: 81 (22) Sequence Number: - Start / End Page: 4963 - 4966 Identifier: ISSN: 0031-9007
CoNE: https://pure.mpg.de/cone/journals/resource/954925433406_1