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  Fast silicon carbide MOSFET based high-voltage push–pull switch for charge state separation of highly charged ions with a Bradbury–Nielsen gate

Schweiger, C., Door, M., Filianin, P., Herkenhoff, J., Kromer, K., Lange, D., et al. (2022). Fast silicon carbide MOSFET based high-voltage push–pull switch for charge state separation of highly charged ions with a Bradbury–Nielsen gate. Review of Scientific Instruments, 93: 094702. doi:10.1063/5.0083515.

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 Creators:
Schweiger, Christoph1, Author           
Door, Menno1, Author           
Filianin, Pavel1, Author           
Herkenhoff, Jost1, Author           
Kromer, Kathrin1, Author           
Lange, Daniel1, Author           
Marschall , Domenik1, Author
Rischka, Alexander1, Author           
Wagner , Thomas1, Author
Eliseev, Sergey1, Author           
Blaum, Klaus1, Author           
Affiliations:
1Division Prof. Dr. Klaus Blaum, MPI for Nuclear Physics, Max Planck Society, ou_904548              

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 MPINP: Speichertechnik - Abteilung Blaum
 MPINP: Expt. PENTATRAP - Abteilung Blaum
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 Dates: 2022-09-08
 Publication Status: Published online
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 Identifiers: DOI: 10.1063/5.0083515
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Title: Review of Scientific Instruments
  Abbreviation : Rev. Sci. Instrum.
Source Genre: Journal
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Publ. Info: Melville, NY : AIP Publishing
Pages: - Volume / Issue: 93 Sequence Number: 094702 Start / End Page: - Identifier: ISSN: 0034-6748
CoNE: https://pure.mpg.de/cone/journals/resource/991042742033452