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  Vapor phase synthesis of topological semimetal MoP2 nanowires and their resistivity

Jin, G., Han, H. J., Hart, J. L., Sam, Q., Kiani, M. T., Hynek, D. J., et al. (2022). Vapor phase synthesis of topological semimetal MoP2 nanowires and their resistivity. Applied Physics Letters, 121(11): 113105, pp. 1-5. doi:10.1063/5.0106357.

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Jin, Gangtae1, Author
Han, Hyeuk Jin1, Author
Hart, James L.1, Author
Sam, Quynh1, Author
Kiani, Mehrdad T.1, Author
Hynek, David J.1, Author
Hasse, Vicky2, Author           
Felser, Claudia3, Author           
Cha, Judy1, Author
Affiliations:
1External Organizations, ou_persistent22              
2Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863425              
3Claudia Felser, Inorganic Chemistry, Max Planck Institute for Chemical Physics of Solids, Max Planck Society, ou_1863429              

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 Abstract: Topological semimetals (TSMs) possess topologically protected surface states near the Fermi level with high carrier densities and high mobilities, holding distinct potential for low-dissipation on-chip interconnects that may outperform current copper interconnects for continued dimensional scaling of CMOS technologies. To translate the exotic properties of TSMs into practical interconnects, developments of high precision synthesis for these emergent semimetals are essential. Here, we report the synthesis of TSM molybdenum diphosphide (MoP2) nanowires with controlled dimensions and crystallinity. By varying the growth temperature in chemical vapor depositions (CVD), we achieve polycrystalline MoP2 as well as single-crystalline MoP2-x nanostructures, which are confined in highly anisotropic forms on crystalline substrates with a miscut angle of 1°. The measured metallic properties, such as room temperature resistivity and temperature-dependent resistance, of the synthesized MoP2 nanostructures show promising dimensional effects for interconnect applications, suggesting potential enhancement of topological surface states in electron transport at reduced dimensions. The demonstration of CVD-grown MoP2 nanowires provides opportunities for careful investigations of design rules for TSMs-based nanoscale interconnects. © 2022 Author(s).

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Language(s): eng - English
 Dates: 2022-09-152022-09-15
 Publication Status: Issued
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 Identifiers: DOI: 10.1063/5.0106357
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Title: Applied Physics Letters
  Abbreviation : Appl. Phys. Lett.
Source Genre: Journal
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Publ. Info: Melville, NY : American Institute of Physics
Pages: - Volume / Issue: 121 (11) Sequence Number: 113105 Start / End Page: 1 - 5 Identifier: ISSN: 0003-6951
CoNE: https://pure.mpg.de/cone/journals/resource/954922836223