hide
Free keywords:
-
Abstract:
We have studied the resistivity of a hole-doped 95 nm thin film of
La0.88Sr0.1MnO3 sample as a function of pressure up to 2.0 GPa. For
pressures below 0.81 GPa, the sample showed that the resistivity
decreased at all temperatures and the metal insulator transition
temperature T-MI increased to higher temperatures similar to the
pressure results observed previously in bulk samples and thin films of
manganites. However, for pressures above 0.81 GPa, we observed a rapid
increase in resistivity and a rapid decrease of T-MI as a function of
pressure. The rate of change of T-MI with pressure is -133.5 K/GPa
which is an order of magnitude larger than that of bulk samples and
thin films of manganite with an opposite sign. We interpreted our
results as a consequence of a phase change in the film by pressure from
having strain induced periodic microtwinned regions below 0.81 GPa to a
strained free region and formation of coherent twins above this
pressure in 95 nm thin film of La0.88Sr0.1MnO3. (c) 2006 American
Institute of Physics.
