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Free keywords:
ZnO nanowire; field effect transistor; contact resistance; PSPICE simulation
Abstract:
A single ZnO nanowire field-effect transistor(FET) was fabricated and
its current-voltage characteristics were recorded at the temperatures
ranging from T = 107 K to 300 K. Current-voltage characteristics showed
typical non-ohmic behaviors with noticeable temperature dependence of
the carrier concentration and the mobilities, reflecting the influence
of the contact barriers formed between the ZnO nanowire and metal
electrodes. In this paper, an equivalent circuit model of the ZnO
nanowire FET and its analysis methods with PSPICE simulation are
suggested in order to model the contact barriers in nanowire devices.
