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  Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si0.7Ge0.3 virtual substrates

Stoffel, M., Zhang, J., & Schmidt, O. G. (2006). Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si0.7Ge0.3 virtual substrates. IEICE Transactions on Electronics, E89-C(7), 921-925.

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Datensatz-Permalink: https://hdl.handle.net/21.11116/0000-000E-FC02-4 Versions-Permalink: https://hdl.handle.net/21.11116/0000-000E-FC03-3
Genre: Zeitschriftenartikel

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 Urheber:
Stoffel, M.1, Autor           
Zhang, J.1, 2, Autor           
Schmidt, O. G.1, 3, 4, 5, Autor           
Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              
2Department Quantum Many-Body Theory (Walter Metzner), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370486              
3Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              
4Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499              
5Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              

Inhalt

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Schlagwörter: siGe; interband tunneling diodes; negative differential resistance; SiGe relaxed buffers
 Zusammenfassung: We present room temperature current voltage characteristics from SiGe
interband tunneling diodes epitaxially grown on highly resistive
Si(001) substrates. In this case, a maximum peak to valley current
ratio (PVCR) of 5.65 was obtained. The possible integration of a SiGe
tunnel diode with a strained Si transistor lead us to investigate the
growth of SiGe interband tunneling diodes on Si0.7Ge0.3 virtual
substrates. A careful optimization of the layer structure leads to a
maximum PVCR of 1.36 at room temperature. The latter value can be
further increased to 2.26 at 3.7 K. Our results demonstrate that high
quality SiGe interband tunneling diodes can be realized, which is of
great interest for future memory and high speed applications.

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Sprache(n): eng - English
 Datum: 2006
 Publikationsstatus: Erschienen
 Seiten: -
 Ort, Verlag, Ausgabe: -
 Inhaltsverzeichnis: -
 Art der Begutachtung: Expertenbegutachtung
 Identifikatoren: eDoc: 306244
ISI: 000238962000008
 Art des Abschluß: -

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Titel: IEICE Transactions on Electronics
Genre der Quelle: Zeitschrift
 Urheber:
Affiliations:
Ort, Verlag, Ausgabe: -
Seiten: - Band / Heft: E89-C (7) Artikelnummer: - Start- / Endseite: 921 - 925 Identifikator: ISSN: 0916-8524