Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si0.7Ge0.3
 virtual substrates

Stoffel, M.; Zhang, J.; Schmidt, O. G.

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Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si_0.7Ge_0.3 virtual substrates

Stoffel, M., Zhang, J., & Schmidt, O. G. (2006). Epitaxial growth of SiGe interband tunneling diodes on Si(001) and on Si_0.7Ge_0.3 virtual substrates. IEICE Transactions on Electronics, E89-C(7), 921-925.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-FC02-4 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-FC03-3

Genre: Journal Article

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Creators:
Stoffel, M.¹, Author
Zhang, J.^{1, 2}, Author
Schmidt, O. G.^{1, 3, 4, 5}, Author

Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481
2Department Quantum Many-Body Theory (Walter Metzner), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370486
3Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501
4Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499
5Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504

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Free keywords: siGe; interband tunneling diodes; negative differential resistance; SiGe relaxed buffers

Abstract: We present room temperature current voltage characteristics from SiGe
interband tunneling diodes epitaxially grown on highly resistive
Si(001) substrates. In this case, a maximum peak to valley current
ratio (PVCR) of 5.65 was obtained. The possible integration of a SiGe
tunnel diode with a strained Si transistor lead us to investigate the
growth of SiGe interband tunneling diodes on Si0.7Ge0.3 virtual
substrates. A careful optimization of the layer structure leads to a
maximum PVCR of 1.36 at room temperature. The latter value can be
further increased to 2.26 at 3.7 K. Our results demonstrate that high
quality SiGe interband tunneling diodes can be realized, which is of
great interest for future memory and high speed applications.

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Language(s): eng - English

Dates: Date issued: 2006

Publication Status: Issued

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Table of Contents: -

Rev. Type: Peer

Identifiers: eDoc: 306244
ISI: 000238962000008

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Title: IEICE Transactions on Electronics

Source Genre: Journal

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Pages: - Volume / Issue: E89-C (7) Sequence Number: - Start / End Page: 921 - 925 Identifier: ISSN: 0916-8524