ausblenden:
Schlagwörter:
quantum dots; hierarchical self-assembly; micro-photoluminescence
Zusammenfassung:
Novel, self-assembled quantum dot (QD) structures suitable for
single-dot optical spectroscopy are fabricated by combining III-V
molecular beam epitaxy and in situ, atomic layer precise etching.
Several growth and etching steps are used to produce lateral InAs/GaAs
QD bimolecules and unstrained GaAs/AlGaAs QDs with low surface density
(less than or similar to 10(8) cm(-2)). Micro-photoluminescence is used
to investigate the ensemble and single-QD properties of GaAs QDs.
Single-QD spectra show resolution-limited sharp lines at low excitation
and broad "shell-structures" at high excitation intensity. (c) 2006
Elsevier B.V. All rights reserved.