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  Ordered GaAs quantum dot arrays on GaAs(001): Single photon emission and fine structure splitting

Kiravittaya, S., Benyoucef, M., Zapf-Gottwick, R., Rastelli, A., & Schmidt, O. G. (2006). Ordered GaAs quantum dot arrays on GaAs(001): Single photon emission and fine structure splitting. Applied Physics Letters, 89(23): 233102.

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 Creators:
Kiravittaya, S.1, Author           
Benyoucef, M.1, Author           
Zapf-Gottwick, R.1, Author           
Rastelli, A.1, 2, Author           
Schmidt, O. G.1, 2, 3, 4, Author           
Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              
2Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              
3Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499              
4Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              

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 Abstract: Ordered GaAs/AlGaAs quantum dots (QDs) are fabricated on patterned
GaAs(001) substrates and their optical properties are investigated by
microphotoluminescence (PL) spectroscopy. QDs exhibit sharp excitonic
lines with typical single QD emission features. Photon-correlation
spectroscopy shows single photon emission for the neutral exciton
transition. Polarization-dependent PL measurements reveal a sharp
exciton line and a fine structure exchange splitting of about 70 mu eV.
(c) 2006 American Institute of Physics.

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Language(s): eng - English
 Dates: 2006
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 306097
ISI: 000242709200093
 Degree: -

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Title: Applied Physics Letters
Source Genre: Journal
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Pages: - Volume / Issue: 89 (23) Sequence Number: 233102 Start / End Page: - Identifier: ISSN: 0003-6951