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Abstract:
The results of experimental investigation of the vertical electron
transport in a GaAs/Al0.3Ga0.7As/GaAs single-barrier tunneling
licterostructure with a doped barrier are presented. Two-diniensional
accuniulation layers appear on different sides of the barrier as a
result of the ionization of Si donors in the barrier layer. The
nonmonotonic shift of the Current peak is found in the I-V curve of the
tunneling, diode in a magnetic field perpendicular to the planes of
two-diniensional layers. Such a behavior is shown to be successfully
explained in the model of appearing the Coulomb pseudogap and the
pinning of the spin-split Landau levels at the Fermi levels of the
contacts. In this explanation, it is necessary to assume that the Lande
factor is independent of the filling factors of the Landau levels and
is g* = 7.5 for both layers.
