Ge rich Esaki diodes with high peak to valley current ratios

Stoffel, M.; Kar, G. S.; Schmidt, O. G.

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Ge rich Esaki diodes with high peak to valley current ratios

Stoffel, M., Kar, G. S., & Schmidt, O. G. (2005). Ge rich Esaki diodes with high peak to valley current ratios. Materials Science and Engineering C, 25, 826-829.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-FDFA-C Version Permalink: https://hdl.handle.net/21.11116/0000-000E-FDFB-B

Genre: Journal Article

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Creators:
Stoffel, M.¹, Author
Kar, G. S.², Author
Schmidt, O. G.^{1, 2, 3, 4}, Author

Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481
2Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501
3Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499
4Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504

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Language(s): eng - English

Dates: Date issued: 2005

Publication Status: Issued

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Identifiers: eDoc: 250378
ISI: 000233784800055

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Title: Materials Science and Engineering C

Source Genre: Journal

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Pages: - Volume / Issue: 25 Sequence Number: - Start / End Page: 826 - 829 Identifier: -