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Abstract:
An experimental study of the two-, three-, and four-terminal resistance
of a ballistic wire is carried out. The wire is fabricated on the basis
of high-mobility 2D electron gas in an AlGaAs/GaAs heterojunction.
Different behavior of mesoscopic fluctuations of multiterminal
resistances is observed depending on the gate voltage and magnetic
field. At B = 0.45 T, the four-terminal resistance drops almost to zero
and features resembling a ballistic conductance quantization are
observed. (C) 2004 MAIK "Nauka / Interperiodica".
