Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory 
magnetoresistance in GaAs/AlGaAs devices

Mani, R. G.; Smet, J. H.; von Klitzing, K.; Narayanamurti, V.; Johnson, W. B.; Umansky, V.

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Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices

Mani, R. G., Smet, J. H., von Klitzing, K., Narayanamurti, V., Johnson, W. B., & Umansky, V. (2004). Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices. Physical Review Letters, 92(14): 146801.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-FECE-D Version Permalink: https://hdl.handle.net/21.11116/0000-000E-FECF-C

Genre: Journal Article

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Creators:
Mani, R. G.¹, Author
Smet, J. H.^{1, 2}, Author
von Klitzing, K.¹, Author
Narayanamurti, V., Author
Johnson, W. B., Author
Umansky, V., Author

Affiliations:
1Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504
2Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370489

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Abstract: We examine the phase and the period of the radiation-induced
oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ
magnetic field calibration by electron spin resonance of
diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle
phase shift with respect to the hf = j (h) over bar omega(c) condition
for j greater than or equal to 1, and they also suggest a small
(approximate to2%) reduction in the effective mass ratio, m*/m, with
respect to the standard value for GaAs/AlGaAs devices.

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Language(s): eng - English

Dates: Date issued: 2004

Publication Status: Issued

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Identifiers: eDoc: 192871
ISI: 000221037500046

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Title: Physical Review Letters

Source Genre: Journal

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Pages: - Volume / Issue: 92 (14) Sequence Number: 146801 Start / End Page: - Identifier: ISSN: 0031-9007