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Abstract:
We have investigated the magnetophonon resonance (MPR) effect in a
series of single GaAs quantum well samples which are symmetrically
modulation doped in the adjacent short period AlAs/GaAs superlattices.
Two distinct MPR series are observed originating from the Gamma and X
electrons interacting with the GaAs and AlAs longitudinal optic (LO)
phonons respectively. This confirms unequivocally the presence of X
electrons in the AlAs quantum well of the superlattice previously
invoked to explain the high electron mobility in these structures
[Friedland et al., Phys. Rev. Lett 77, 4616 (1996)].