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Abstract:
We examine the radiation induced modification of the Hall effect in
high-mobility GaAs/AlxGa1-xAs devices that exhibit vanishing resistance
under microwave excitation. The modification in the Hall effect upon
irradiation is characterized by (a) a small reduction in the slope of
the Hall resistance curve with respect to the dark value, (b) a
periodic reduction in the magnitude of the Hall resistance R-xy that
correlates with an increase in the diagonal resistance R-xx, and (c) a
Hall resistance correction that disappears as the diagonal resistance
vanishes.
