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  Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin-splitting in high-mobility GaAs/AlxGa1-xAs devices

Mani, R. G., Smet, J. H., von Klitzing, K., Narayanamurti, V., Johnson, W. B., & Umansky, V. (2004). Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin-splitting in high-mobility GaAs/AlxGa1-xAs devices. Physical Review B, 69(19): 193304.

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 Creators:
Mani, R. G.1, Author           
Smet, J. H.1, 2, Author           
von Klitzing, K.1, Author           
Narayanamurti, V., Author
Johnson, W. B., Author
Umansky, V., Author
Affiliations:
1Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              
2Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370489              

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 Abstract: We suggest an approach for characterizing the zero-field spin splitting
of high mobility two-dimensional electron systems, when beats are not
readily observable in the Shubnikov-de Haas effect. The zero-field spin
splitting and the effective magnetic field seen in the reference frame
of the electron are evaluated from a quantitative study of beats
observed in radiation-induced magnetoresistance oscillations.

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Language(s): eng - English
 Dates: 2004
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 192958
ISI: 000221961700014
 Degree: -

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Title: Physical Review B
Source Genre: Journal
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Pages: - Volume / Issue: 69 (19) Sequence Number: 193304 Start / End Page: - Identifier: ISSN: 1098-0121