De Haas-van Alphen effect study of CePd2Si2

Sheikin, I.; Gröger, A.; Raymond, S.; Jaccard, D.; Aoki, D.; Harima, H.; Flouquet, J.

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De Haas-van Alphen effect study of CePd₂Si₂

Sheikin, I., Gröger, A., Raymond, S., Jaccard, D., Aoki, D., Harima, H., et al. (2004). De Haas-van Alphen effect study of CePd₂Si₂. Physica B, 346, 310-313.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-F94F-2 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-F950-F

Genre: Journal Article

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Creators:
Sheikin, I.¹, Author
Gröger, A., Author
Raymond, S., Author
Jaccard, D., Author
Aoki, D., Author
Harima, H., Author
Flouquet, J., Author

Affiliations:
1High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3371774

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Free keywords: CePd2Si2; de Haas-van Alphen effect; spin-splitting; effective mass

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Language(s): eng - English

Dates: Date issued: 2004

Publication Status: Issued

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Identifiers: eDoc: 212797
ISI: 000221271400065

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Title: Physica B

Source Genre: Journal

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Pages: - Volume / Issue: 346 Sequence Number: - Start / End Page: 310 - 313 Identifier: ISSN: 0921-4526