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  Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes

Khorenko, E., Prost, W., Tegude, F. J., Stoffel, M., Duschl, R., Dashiell, M. W., et al. (2004). Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes. Journal of Applied Physics, 96, 3848-3851.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-F7EB-3 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-F7EC-2
Genre: Journal Article

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 Creators:
Khorenko, E., Author
Prost, W., Author
Tegude, F. J., Author
Stoffel, M.1, Author           
Duschl, R.2, Author           
Dashiell, M. W.2, Author           
Schmidt, O. G.1, 2, 3, 4, Author           
Affiliations:
1Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              
2Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              
3Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499              
4Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              

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Language(s): eng - English
 Dates: 2004
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 213057
ISI: 000224145800041
 Degree: -

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Title: Journal of Applied Physics
Source Genre: Journal
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Publ. Info: -
Pages: - Volume / Issue: 96 Sequence Number: - Start / End Page: 3848 - 3851 Identifier: ISSN: 0021-8979