Raman scattering studies of Ge/Si islands under hydrostatic pressure

Teo, K. L.; Shen, Z. X.; Schmidt, O. G.

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Raman scattering studies of Ge/Si islands under hydrostatic pressure

Teo, K. L., Shen, Z. X., & Schmidt, O. G. (2004). Raman scattering studies of Ge/Si islands under hydrostatic pressure. physica status solidi (b), 241(14), 3274-3278.

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Datensatz-Permalink: https://hdl.handle.net/21.11116/0000-000E-F7D7-9 Versions-Permalink: https://hdl.handle.net/21.11116/0000-000E-F7D8-8

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Urheber:
Teo, K. L., Autor
Shen, Z. X., Autor
Schmidt, O. G.^{1, 2, 3, 4}, Autor

Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501
2Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499
3Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504
4Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481