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  High-frequency point-contact spectroscopy of TiSi2, TaSi2, and VSi2

Balkashin, O. P., Jansen, A. G. M., Laborde, O., Gottlieb, U., Sukhodub, G. L., Wyder, P., et al. (2002). High-frequency point-contact spectroscopy of TiSi2, TaSi2, and VSi2. Journal of Low Temperature Physics, 129(3-4), 105-116.

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Balkashin, O. P., Author
Jansen, A. G. M.1, Author           
Laborde, O., Author
Gottlieb, U., Author
Sukhodub, G. L., Author
Wyder, P.1, Author           
Yanson, I. K., Author
Affiliations:
1High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3371774              

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 Abstract: High-frequency point-contact spectroscopy as well as
conventional low-frequency PC spectroscopy has been used for
determining the spectral functions of the electron-phonon
interaction (EPI) for three disilicides TiSi2, TaSi2, and VSi2.
The temperature dependences of resistivity have been calculated
from obtained EPI functions. Comparison of calculated
dependences with known experimental data allowed correction of
the electron-phonon interaction constants for the studied
disilicides.

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Language(s): eng - English
 Dates: 2002
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 7492
ISI: 000178817100001
 Degree: -

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Title: Journal of Low Temperature Physics
Source Genre: Journal
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Pages: - Volume / Issue: 129 (3-4) Sequence Number: - Start / End Page: 105 - 116 Identifier: ISSN: 0022-2291