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  Percolation of quantum Hall droplets in intentionally disordered GaAs/GaAlAs heterojunctions

Buth, K., Widmann, M., Merkt, U., Batke, E., & Eberl, K. (2002). Percolation of quantum Hall droplets in intentionally disordered GaAs/GaAlAs heterojunctions. Physica E, 12(1-4), 662-665.

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 Creators:
Buth, K., Author
Widmann, M., Author
Merkt, U., Author
Batke, E., Author
Eberl, K.1, Author           
Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              

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Free keywords: quantum Hall insulator; far-infrared excitation
 Abstract: The transition of two-dimensional electron systems (2DES) with
intentional disorder in form of a delta-layer doped with
beryllium into quantum Hall insulators composed of separate
electron droplets is examined by magnetotransport and far-
infrared spectroscopy. We observe the percolation threshold at
filling factors clearly below nu(c) = (1)/(2) that is expected
for statistical disorder. The far-infrared excitations bear
strong resemblance to magnetoplasmons of density-modulated 2DES
and antidot systems in regular arrays. Thus, a perceptible
degree of short-range order between the sites of the beryllium
acceptors is uncovered. (C) 2002 Elsevier Science B.V. All
rights reserved.

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Language(s): eng - English
 Dates: 2002
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 7326
ISI: 000175206300164
 Degree: -

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Title: Physica E
Source Genre: Journal
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Affiliations:
Publ. Info: -
Pages: - Volume / Issue: 12 (1-4) Sequence Number: - Start / End Page: 662 - 665 Identifier: ISSN: 1386-9477