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Free keywords:
semiconductor; Raman scattering; high pressure; zinc telluride
Abstract:
Raman measurements of ZnTe have been performed at pressures up
to 15 GPa. Frequencies, line widths, and intensities of first-
and second-order Raman features of the zincblende phase (0-9.5
GPa) were studied in detail. In this note, we focus on the
Raman spectra of the high-pressure cinnabar and Cnicin phases.
In the transition regime from cinnabar to Cmcm (12.2 to 13.7
GPa) the Raman data indicate the possible existence of a new
intermediate high-pressure phase.
