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  Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures

Dashiell, M. W., Denker, U., Müller, C., Costantini, G., Manzano, C., Kern, K., et al. (2002). Photoluminescence of ultrasmall Ge quantum dots grown by molecular-beam epitaxy at low temperatures. Applied Physics Letters, 80(7), 1279-1281.

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 Creators:
Dashiell, M. W.1, Author           
Denker, U.1, 2, 3, Author           
Müller, C.1, Author           
Costantini, G.2, Author           
Manzano, C.2, Author           
Kern, K.2, Author           
Schmidt, O. G.1, 2, 3, 4, Author           
Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              
2Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              
3Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              
4Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499              

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 Abstract: Low-temperature epitaxial growth of Si-Ge heterostructures
opens possibilities for synthesizing very small and abrupt low-
dimensional structures due to the low adatom surface
mobilities. We present photoluminescence from Ge quantum
structures grown by molecular-beam epitaxy at low temperatures
which reveals a transition from two-dimensional to three-
dimensional growth. Phononless radiative recombination is
observed from <105> faceted Ge quantum dots with height of
approximately 0.9 nm and lateral width of 9 nm. Postgrowth
annealing reveals a systematic blueshift of the Ge quantum
dot's luminescence and a reduction in nonradiative
recombination channels. With increasing annealing temperatures
Si-Ge intermixing smears out the three-dimensional carrier
localization around the dot. (C) 2002 American Institute of
Physics.

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Language(s): eng - English
 Dates: 2002
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 7406
ISI: 000173896400057
 Degree: -

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Title: Applied Physics Letters
Source Genre: Journal
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Pages: - Volume / Issue: 80 (7) Sequence Number: - Start / End Page: 1279 - 1281 Identifier: ISSN: 0003-6951