ausblenden:
Schlagwörter:
self-assembled quantum dots; germanium; silicon-germanium
Zusammenfassung:
Magneto-tunnelling for holes was studied in SiGe/Si SiGe
heterostructures with Ge quantum dots of the 'hut cluster' type
in the middle of the Si-layer. At temperatures below 10 K two
different transport regimes can be distinguished in the
current-voltage characteristic. In high magnetic fields a
dramatic instability develops in the non-linear current-voltage
characteristics. The influence of different layer structures is
discussed. (C) 2002 Elsevier Science B.V. All rights reserved.