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  The thickness dependence of the effect of pressures on magnetic and electronic properties of thin films of La2/3Ca1/3MnO3

Jacob, S., Roch, T., Razavi, F. S., Gross, G. M., & Habermeier, H.-U. (2002). The thickness dependence of the effect of pressures on magnetic and electronic properties of thin films of La2/3Ca1/3MnO3. Journal of Applied Physics, 91(4), 2232-2235.

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 Creators:
Jacob, S., Author
Roch, T., Author
Razavi, F. S.1, 2, Author           
Gross, G. M.2, Author           
Habermeier, H.-U.2, 3, 4, Author           
Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              
2Scientific Facility Thin Film Technology (Gennady Logvenov), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370497              
3Department Solid State Spectroscopy (Bernhard Keimer), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370480              
4Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370483              

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 Abstract: The discovery of the colossal magnetoresistance and pressure
effects introduced new questions concerning the complex
interplay among lattice structure, magnetism, and transport in
doped perovskite manganites. To observe the interplay between
the effect of pressure and strain due to the substrate in the
La2/3Ca1/3MnO3 compound, we produced epitaxial films with the
thickness varied between 20 and 100 nm on SrTiO3 substrates,
using the pulse laser deposition technique and under the same
epitaxial growth conditions. We measured magnetic transition
temperature T-C and resistivity rho, as a function of pressure
up to 8 kbar. Using these results, the dependence of bond
compression on pressure, and the lattice distortion induced by
the substrate, are discussed. We also report a universal
behavior from the plot of d ln T-C/dP and drho/dP versus T-C
for these films, as well as previously published results on
ceramic and thin films of this compound. (C) 2002 American
Institute of Physics.

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Language(s): eng - English
 Dates: 2002
 Publication Status: Issued
 Pages: -
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 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 7420
ISI: 000173553800076
 Degree: -

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Title: Journal of Applied Physics
Source Genre: Journal
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Pages: - Volume / Issue: 91 (4) Sequence Number: - Start / End Page: 2232 - 2235 Identifier: ISSN: 0021-8979