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  Space charge influenced oxygen incorporation in oxides: in how far does it contribute to the drift of Taguchi sensors?

Jamnik, J., Kamp, B., Merkle, R., & Maier, J. (2002). Space charge influenced oxygen incorporation in oxides: in how far does it contribute to the drift of Taguchi sensors? Solid State Ionics, 150(1-2), 157-166.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-E4BF-A Version Permalink: https://hdl.handle.net/21.11116/0000-000E-E4C0-7
Genre: Journal Article

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 Creators:
Jamnik, J.1, Author           
Kamp, B.1, Author           
Merkle, R.1, Author           
Maier, J.1, Author           
Affiliations:
1Department Physical Chemistry of Solids (Joachim Maier), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370483              

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Free keywords: sensor; space charge; simulation; oxygen incorporation; mixed conductor
 Abstract: The change of resistance of SnO2 upon the change of oxygen
partial pressure-a well known sensor effect-is studied
theoretically. A linearised drift-diffusion model is used. The
boundary conditions are formulated in terms of reaction rate
equations. Resistance vs. time curves as well as the evolution
of the concentration profiles of electrons and oxygen vacancies
are numerically calculated anti discussed. Analytical
approximations are derived for the corresponding time
constants. Relevance of the model for commercial sensors is
discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

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Language(s): eng - English
 Dates: 2002
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 7186
ISI: 000177687600015
 Degree: -

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Title: Solid State Ionics
Source Genre: Journal
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Publ. Info: -
Pages: - Volume / Issue: 150 (1-2) Sequence Number: - Start / End Page: 157 - 166 Identifier: ISSN: 0167-2738