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  Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures

Mani, R. G., Smet, J. H., von Klitzing, K., Narayanamurti, V., Johnson, W. B., & Umansky, V. (2002). Zero-resistance states induced by electromagnetic-wave excitation in GaAs/AlGaAs heterostructures. Nature, 420(6916), 646-650.

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 Creators:
Mani, R. G.1, Author           
Smet, J. H.1, 2, Author           
von Klitzing, K.1, Author           
Narayanamurti, V., Author
Johnson, W. B., Author
Umansky, V., Author
Affiliations:
1Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              
2Research Group Solid State Nanophysics (Jurgen H. Smet), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370489              

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 Abstract: The observation of vanishing electrical resistance in condensed
matter has led to the discovery of new phenomena such as, for
example, superconductivity, where a zero-resistance state can
be detected in a metal below a transition temperature T-c (ref.
1). More recently, quantum Hall effects were discovered from
investigations of zero-resistance states at low temperatures
and high magnetic fields in two-dimensional electron systems
(2DESs)(2-4). In quantum Hall systems and superconductors,
zero-resistance states often coincide with the appearance of a
gap in the energy spectrum(1,2,4). Here we report the
observation of zero-resistance states and energy gaps in a
surprising setting(5) : ultrahigh-mobility GaAs/AlGaAs
heterostructures that contain a 2DES exhibit vanishing diagonal
resistance without Hall resistance quantization at low
temperatures and low magnetic fields when the specimen is
subjected to electromagnetic wave excitation. Zero-resistance
states occur about magnetic fields B=4/5B(f) and B=4/9B(f),
where B-f=2pifm*/e;m* is the electron mass, e is the electron
charge, and f is the electromagnetic-wave frequency. Activated
transport measurements on the resistance minima also indicate
an energy gap at the Fermi level(6). The results suggest an
unexpected radiation-induced, electronic-state-transition in
the GaAs/AlGaAs 2DES.

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Language(s): eng - English
 Dates: 2002
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 7088
ISI: 000179751800039
 Degree: -

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Title: Nature
Source Genre: Journal
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Pages: - Volume / Issue: 420 (6916) Sequence Number: - Start / End Page: 646 - 650 Identifier: ISSN: 0028-0836