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  Universal flow diagram for the magnetoconductance in disordered GaAs layers

Murzin, S. S., Weiss, M., Jansen, A. G. M., & Eberl, K. (2002). Universal flow diagram for the magnetoconductance in disordered GaAs layers. Physical Review B, 66(23): 233314.

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 Creators:
Murzin, S. S.1, Author           
Weiss, M.1, Author           
Jansen, A. G. M.1, Author           
Eberl, K.2, Author           
Affiliations:
1High Magnetic Field Laboratory, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3371774              
2Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              

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 Abstract: The temperature driven flow lines of the diagonal and Hall
magnetoconductance data (G(xx),G(xy)) are studied in heavily
Si-doped, disordered GaAs layers with different thicknesses.
The flow lines are quantitatively well described by a recent
universal scaling theory developed for the case of particle-
vortex duality symmetry. The separatrix G(xy)=0.5 (in units
e(2)/h) separates an insulating state from a quantum Hall-
effect (QHE) state. The merging into the insulator or the QHE
state at low temperatures happens along a semicircle separatrix
G(xx)(2)+(G(xy)-1/2)(2)=1/4, which is divided by an unstable
fixed point at (G(xx),G(xy))=(1/2,1/2).

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Language(s): eng - English
 Dates: 2002
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: Peer
 Identifiers: eDoc: 7473
ISI: 000180279400027
 Degree: -

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Title: Physical Review B
Source Genre: Journal
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Publ. Info: -
Pages: - Volume / Issue: 66 (23) Sequence Number: 233314 Start / End Page: - Identifier: ISSN: 1098-0121