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  Raman-active modes of porous gallium phosphide at high pressures and low temperatures

Ursaki, V. V., Manjón, F. J., Syassen, K., Tiginyanu, I. M., Irmer, G., & Monecke, J. (2002). Raman-active modes of porous gallium phosphide at high pressures and low temperatures. Journal of Physics: Condensed Matter, 14, 13879-13887.

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 Creators:
Ursaki, V. V., Author
Manjón, F. J.1, Author           
Syassen, K.1, 2, Author           
Tiginyanu, I. M., Author
Irmer, G., Author
Monecke, J., Author
Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              
2Department Solid State Quantum Electronics (Jochen Mannhart), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370485              

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 Dates: 2002
 Publication Status: Issued
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 Rev. Type: -
 Identifiers: eDoc: 13121
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Title: Journal of Physics: Condensed Matter
Source Genre: Journal
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Publ. Info: -
Pages: - Volume / Issue: 14 Sequence Number: - Start / End Page: 13879 - 13887 Identifier: -