Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain 
fields, material interdiffusion, and island formation

Schmidt, O. G.; Eberl, K.

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Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation

Schmidt, O. G., & Eberl, K. (2000). Multiple layers of self-asssembled Ge/Si islands: Photoluminescence, strain fields, material interdiffusion, and island formation. Physical Review B, 61, 13721-13729.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-EA8F-A Version Permalink: https://hdl.handle.net/21.11116/0000-000E-EA90-7

Genre: Journal Article

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Schmidt, O. G.^{1, 2, 3, 4}, Author
Eberl, K.¹, Author

Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501
2Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499
3Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504
4Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481

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Dates: Date issued: 2000

Publication Status: Issued

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Identifiers: eDoc: 181845
Other: 27447

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Title: Physical Review B

Source Genre: Journal

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Pages: - Volume / Issue: 61 Sequence Number: - Start / End Page: 13721 - 13729 Identifier: -