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  Resonant Raman scattering by acoustical phonons in Ge/Si self-assembled quantum dots: Interferences and ordering effects

Cazayous, M., Huntzinger, J. R., Groenen, J., Mlayah, A., Christiansen, S., Strunk, H. P., et al. (2000). Resonant Raman scattering by acoustical phonons in Ge/Si self-assembled quantum dots: Interferences and ordering effects. Physical Review B, 62, 7243-7248.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-E687-6 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-E688-5
Genre: Journal Article

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 Creators:
Cazayous, M., Author
Huntzinger, J. R., Author
Groenen, J., Author
Mlayah, A., Author
Christiansen, S., Author
Strunk, H. P., Author
Schmidt, O. G.1, 2, 3, 4, Author           
Eberl, K.1, Author           
Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501              
2Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499              
3Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504              
4Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481              

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 Dates: 2000
 Publication Status: Issued
 Pages: -
 Publishing info: -
 Table of Contents: -
 Rev. Type: -
 Identifiers: eDoc: 181388
Other: 26961
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Title: Physical Review B
Source Genre: Journal
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Publ. Info: -
Pages: - Volume / Issue: 62 Sequence Number: - Start / End Page: 7243 - 7248 Identifier: -