Room temperature I-V characteristics of Si/Si1-xGex/Si interband tunneling 
diodes

Duschl, R.; Schmidt, O. G.; Eberl, K.

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Room temperature I-V characteristics of Si/Si_1-xGe_x/Si interband tunneling diodes

Duschl, R., Schmidt, O. G., & Eberl, K. (2000). Room temperature I-V characteristics of Si/Si_1-xGe_x/Si interband tunneling diodes. Physica E, 7, 836-839.

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Datensatz-Permalink: https://hdl.handle.net/21.11116/0000-000E-E67D-3 Versions-Permalink: https://hdl.handle.net/21.11116/0000-000E-E67E-2

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Urheber:
Duschl, R.¹, Autor
Schmidt, O. G.^{1, 2, 3, 4}, Autor
Eberl, K.¹, Autor

Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501
2Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499
3Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504
4Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481