Room temperature I-V characteristics of Si/Si1-xGex/Si interband tunneling 
diodes

Duschl, R.; Schmidt, O. G.; Eberl, K.

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Room temperature I-V characteristics of Si/Si_1-xGe_x/Si interband tunneling diodes

Duschl, R., Schmidt, O. G., & Eberl, K. (2000). Room temperature I-V characteristics of Si/Si_1-xGe_x/Si interband tunneling diodes. Physica E, 7, 836-839.

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Item Permalink: https://hdl.handle.net/21.11116/0000-000E-E67D-3 Version Permalink: https://hdl.handle.net/21.11116/0000-000E-E67E-2

Genre: Journal Article

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Creators:
Duschl, R.¹, Author
Schmidt, O. G.^{1, 2, 3, 4}, Author
Eberl, K.¹, Author

Affiliations:
1Former Scientific Facilities, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370501
2Scientific Facility Nanostructuring Lab (Jürgen Weis), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370499
3Abteilung v. Klitzing, Former Departments, Max Planck Institute for Solid State Research, Max Planck Society, ou_3370504
4Department Nanoscale Science (Klaus Kern), Max Planck Institute for Solid State Research, Max Planck Society, ou_3370481

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Dates: Date issued: 2000

Publication Status: Issued

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Identifiers: eDoc: 181433
Other: 27008

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Title: Physica E

Source Genre: Journal

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Pages: - Volume / Issue: 7 Sequence Number: - Start / End Page: 836 - 839 Identifier: -